Part Number | SSM3J306T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 30V 2.4A TSM |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 117 mOhm @ 1A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SSM3J306T
TOSHBIA
866
1.14
Hongkong Shengshi Electronics Limited
SSM3J306T
TOSHI
3864
2.025
Gallop Great Holdings (Hong Kong) Limited
SSM3J306T
TOSIBA
4707
2.91
Ysx Tech Co., Limited
SSM3J306T
TOSIHBA
4231
3.795
Shenzhen WTX Capacitor Co., Ltd.
SSM3J306T
TOSHIDA
3827
4.68
Yingxinyuan INT'L (Group) Limited