Part Number | SSM3J304T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 2.3A TSM |
Series | U-MOSIII |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 335pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 127 mOhm @ 1A, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SSM3J304T
TOSHBIA
24000
1.4
Gallop Great Holdings (Hong Kong) Limited
SSM3J304T
TOSHI
30000
2.12
QUARKTWIN TECHNOLOGY LIMITED
SSM3J304T
TOSIBA
3000
2.84
Hong Kong Capital Industrial Co.,Ltd
SSM3J304T
TOSIHBA
368000
3.56
Shenzhen WTX Capacitor Co., Ltd.
SSM3J304T
TOSHIDA
1047
4.28
WIN AND WIN ELECTRONICS LIMITED