Part Number | SSM3J16CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 0.1A CST3 |
Series | 蟺-MOSVI |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
Vgs(th) (Max) @ Id | 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 11pF @ 3V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 100mW (Ta) |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | CST3 |
Package / Case | SC-101, SOT-883 |
Image |
SSM3J16CT
TOSHBIA
5000000
1.07
Hongkong Shengshi Electronics Limited
SSM3J16CT
TOSHI
6000
1.8375
Gallop Great Holdings (Hong Kong) Limited
SSM3J16CT
TOSIBA
6000
2.605
Hong Kong Capital Industrial Co.,Ltd
SSM3J16CT
TOSIHBA
55100
3.3725
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SSM3J16CT L3F T
TOSHIDA
11550
4.14
CIS Ltd (CHECK IC SOLUTION LIMITED)