Part Number | SSM3J15FV,L3F(T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 30V 0.1A VESM |
Series | 蟺-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
Vgs(th) (Max) @ Id | 1.7V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 9.1pF @ 3V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150mW (Ta) |
Rds On (Max) @ Id, Vgs | 12 Ohm @ 10mA, 4V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VESM |
Package / Case | SOT-723 |
Image |
SSM3J15FVL3F
TOSHBIA
1470
0.46
HK HEQING ELECTRONICS LIMITED
SSM3J15FV,L3F
TOSHI
361600
1.75
TERNARY UNION CO., LIMITED
SSM3J15FV,L3F(T
TOSIBA
20000
3.04
Redstar Electronic Limited
SSM3J15FVL3F
TOSIHBA
11563
4.33
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM3J15FVL3F
TOSHIDA
5000
5.62
Ande Electronics Co., Limited