Description
MOSFET 2N-CH 50V 2A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25~C: 2A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOIC
Part Number | SSD2007ATF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET 2N-CH 50V 2A 8-SOIC |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 2A |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
Image |
SSD2007ATF
TOSHBIA
5316
1.37
HK HEQING ELECTRONICS LIMITED
SSD2007ATF
TOSHI
6227
2.2875
Dedicate Electronics (HK) Limited
SSD2007ATF
TOSIBA
18985
3.205
Gallop Great Holdings (Hong Kong) Limited
SSD2007ATF
TOSIHBA
55200
4.1225
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SSD2007ATF MOS()
TOSHIDA
5000
5.04
CIS Ltd (CHECK IC SOLUTION LIMITED)