Part Number | SPD01N60C3BTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 0.8A TO-252 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 11W (Tc) |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SPD01N60C3BTMA1
TOSHBIA
555
1.26
MY Group (Asia) Limited
SPD01N60C3BTMA1
TOSHI
4953
2.1
IC Chip Co., Ltd.
SPD01N60C3BTMA1
TOSIBA
973
2.94
Dedicate Electronics (HK) Limited
SPD01N60C3BTMA1
TOSIHBA
6922
3.78
Hong Kong Huoji Electronics Co., Limited
SPD01N60C3BTMA1
TOSHIDA
1478
4.62
Ysx Tech Co., Limited