(4/5) based on 2 customer reviews
Description
2007-08-30. Rev. 3.0. Page 1. SPP20N65C3, SPA20N65C3 . SPI20N65C3. Cool MOS Power Transistor. V DS. 650. V. RDS(on). 0.19. . ID. 20.7. A. Feature. SPA20N65C3 . IPA65R190E6. SPI20N65C3. IPI65R190C6. SPW20N65C3. IPW65R190C6. 0.07 . SPW47N65C3. IPW65R070C61). 1) Available Q4 2011. Material Content Data Sheet. Sales Product Name. SPA20N65C3 . Issued. 28. August 2013. MA#. MA000737802. Package. PG-TO220-3-121. Weight*. 2242.51 SPA20N60C3. IPA60R165CP. IPA60R125CP. SPA07N60CFD. SPA11N60CFD. SPA15N60CFD. SPA20N60CFD. SPA07N65C3. SPA11N65C3. SPA20N65C3 .
| Part Number | SPA20N65C3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Toshiba |
| Description | MOSFET N-CH 650V 20.7A TO-220 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 34.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
SPA20N65C3
TOSHBIA
2156
1.17
UCAN TRADE (HK) LIMITED
SPA20N65C3
TOSHI
523
2.355
KWANGHUA TECHNOLOGY LIMITED
SPA20N65C3
TOSIBA
4500
3.54
Hongkong Yunling Electronics Co.,Limited
SPA20N65C3
TOSIHBA
4823
4.725
HK KK Int'l Co.,Limited
SPA20N65C3
TOSHIDA
12081
5.91
FLOWER GROUP(HK)CO.,LTD
