Toshiba

Description

Dec 21, 2010 SPA07N65C3 . CoolMOS Power Transistor. V DS. 650. V. RDS(on). 0.6. . ID. 7.3. A. Feature. New revolutionary high voltage technology. The Infineon SPA07N65C3 n channel MOSFET, with RDS(on) = 600 m is used in this design. This is a conservative approach to the selection of Q5. The R JA 3. Material Content Data Sheet. Sales Product Name. SPA07N65C3 . Issued. 15. June 2015. MA#. MA001374714. Package. PG-TO220-3-313. Weight*. 2208.50 SPA07N65C3 . IPA65R600E6. SPI07N65C3. IPI65R600C6. 0.38 . SPP11N65C3. IPP65R380E6. SPA11N65C3. IPA65R380E6. SPI11N65C3. IPI65R380C6. 7 A, 650 V. -. 20-3-31, Full. Infineon. SPA07N65C3 . Yes. Yes. Q6. 1. MOSFET, Small Signal. 115 mA, 60 V. -. SOT-23. ON Semiconductor. 2N7002LT1G. No. Yes.