Part Number | SPA06N60C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 6.2A TO-220 |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.9V @ 260µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 32W (Tc) |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 3.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-FP |
Package / Case | TO-220-3 Full Pack |
Image |
Hot Offer
SPA06N60C3
TOSHIDA
101
3.97
Shenzhen Xincheng Jirui Electronic Technology Co., Ltd.
SPA06N60C3
TOSHBIA
500
0.54
HK HEQING ELECTRONICS LIMITED
SPA06N60C3
TOSHI
19
1.3975
Gallop Great Holdings (Hong Kong) Limited
SPA06N60C3
TOSIBA
75759
2.255
ATLANTIC TECHNOLOGY LIMITED
SPA06N60C3
TOSIHBA
133501
3.1125
Cicotex Electronics (HK) Limited