(4/5) based on 2 customer reviews
Description
MOSFET 2P-CH 20V 2.7A 1206-8 Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 2.7A Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.1W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?
| Part Number | SI5933DC-T1-E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Toshiba |
| Description | MOSFET 2P-CH 20V 2.7A 1206-8 |
| Series | TrenchFET |
| Packaging | |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 2.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET |
| Image |  |
SI5933DC-T1-E3
TOSHBIA
3000
0.77
Gallop Great Holdings (Hong Kong) Limited
SI5933DC-T1-E3
TOSHI
24000
1.5675
Ysx Tech Co., Limited
SI5933DC-T1-E3
TOSIBA
50000
2.365
Hong Kong Yingweida Electronics Co., Ltd.
SI5933DC-T1-E3
TOSIHBA
366229
3.1625
Cicotex Electronics (HK) Limited
SI5933DC-T1-E3
TOSHIDA
1700
3.96
Yingxinyuan INT'L (Group) Limited
