Part Number | SI1305DL-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 8V 0.86A SOT323-3 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 290mW (Ta) |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-3 |
Package / Case | SC-70, SOT-323 |
Image |
Hot Offer
SI1305DL-T1-E3
TOSHIDA
9000
4.59
DES TECHNOLOGY (HK) LIMITED
SI1305DL-T1-E3
TOSHBIA
2850
0.45
Tianke Electronics (HK) Limited
SI1305DL-T1-E3
TOSHI
389600
1.485
Shenzhen WTX Capacitor Co., Ltd.
SI1305DL-T1-E3 ZUMT850B
TOSIBA
202145
2.52
CIS Ltd (CHECK IC SOLUTION LIMITED)
Si1305DL-T1-E3
TOSIHBA
6000
3.555
Yingxinyuan INT'L (Group) Limited