Description
RP1A090ZPTR, rohm, 6-SMD, Flat Leads, MOSFET P-CH 12V 9A MPT6, Discrete Semiconductor Products, FETs - Single
Part Number | RP1A090ZPTR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 12V 9A MPT6 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 7400pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 9A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MPT6 |
Package / Case | 6-SMD, Flat Leads |
Image |
RP1A090ZPTR
TOSHBIA
415
0.45
Gallop Great Holdings (Hong Kong) Limited
RP1A090ZPTR
TOSHI
17676
1.375
ONSTAR ELECTRONICS CO., LIMITED
RP1A090ZPTR
TOSIBA
220360
2.3
Cinty Int'l (HK) Industry Co., Limited
RP1A090ZPTR
TOSIHBA
10000
3.225
Hong Kong Capital Industrial Co.,Ltd
RP1A090ZPTR
TOSHIDA
2019
4.15
Yingxinyuan INT'L (Group) Limited