Part Number | RN4987FE,LF(CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS NPN/PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN4987FE,LF(CT
TOSHBIA
4000
0.26
TLF ELECTRONICS LTD
RN4987FE,LF(CB
TOSHI
15000
0.985
MY Group (Asia) Limited
RN4987FE,LF
TOSIBA
3498
1.71
Gallop Great Holdings (Hong Kong) Limited
RN4987FE,LF
TOSIHBA
6498
2.435
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN4987FE,LF(CT
TOSHIDA
90000
3.16
Redstar Electronic Limited