Part Number | RN4986FE,LF(CB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS NPN/PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN4986FE,LF(CB
TOSHBIA
218
1.51
Chongway Electronics Tech Limited
RN4986FE,LF(CB
TOSHI
100
2.62
Well Sources Technology Co.Ltd
RN4986FE,LF(CB
TOSIBA
10
3.73
Changsha Sibel Electronic Technology Co.,Ltd
RN4986FE,LF(CB
TOSIHBA
15000
4.84
MY Group (Asia) Limited
RN4986FE,LF(CB
TOSHIDA
198600
5.95
LANTEK INT'L TRADE LIMITED