Description
RN4902FE, TOSHIBA, SOT363, Discrete Semiconductor Products, Transistors (BJT) - Arrays, Pre-Biased
Part Number | RN4902FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS NPN/PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN4902FE
TOSHBIA
275469
0.32
Cicotex Electronics (HK) Limited
RN4902FE
TOSHI
7370
0.765
HK HEQING ELECTRONICS LIMITED
RN4902FE
TOSIBA
4000
1.21
Gallop Great Holdings (Hong Kong) Limited
RN4902FE
TOSIHBA
16000
1.655
Yingxinyuan INT'L (Group) Limited
RN4902FE
TOSHIDA
5870
2.1
CIS Ltd (CHECK IC SOLUTION LIMITED)