Part Number | RN4609 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS NPN/PNP PREBIAS 0.3W SM6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Image |
RN4609(TE85L,F)
TOSHBIA
8000
0.37
MY Group (Asia) Limited
RN4609
TOSHI
6311
1.8125
Dedicate Electronics (HK) Limited
RN4609
TOSIBA
1000
3.255
ONSTAR ELECTRONICS CO., LIMITED
RN4609
TOSIHBA
8000
4.6975
MY Group (Asia) Limited
RN4609
TOSHIDA
6311
6.14
Dedicate Electronics (HK) Limited