Part Number | RN2971FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN2971FE
TOSHBIA
8720
0.67
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2971FE
TOSHI
1000
1.715
ONSTAR ELECTRONICS CO., LIMITED
RN2971FE
TOSIBA
2850
2.76
Bonase Electronics (HK) Co., Limited
RN2971FE(TE85L,F)
TOSIHBA
8000
3.805
MY Group (Asia) Limited
RN2971FE
TOSHIDA
74000
4.85
AIC Semiconductor Co., Limited