Part Number | RN2966FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN2966FE
TOSHBIA
4372
0.23
Dedicate Electronics (HK) Limited
RN2966FE
TOSHI
3558
0.9525
ONSTAR ELECTRONICS CO., LIMITED
RN2966FE(TE85L,F)
TOSIBA
4695
1.675
MY Group (Asia) Limited
RN2966FE
TOSIHBA
7051
2.3975
SENTAI CO., LIMITED
RN2966
TOSHIDA
6815
3.12
CIS Ltd (CHECK IC SOLUTION LIMITED)