Part Number | RN2964FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN2964FE(TE85L,F)
TOSHBIA
3234
0.61
MY Group (Asia) Limited
RN2964FE
TOSHI
8053
1.3175
DES TECHNOLOGY (HK) LIMITED
RN2964FE
TOSIBA
7762
2.025
NEW IDEAS INDUSTRIAL CO., LIMITED
RN2964FE
TOSIHBA
7596
2.7325
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2964FE /YYD
TOSHIDA
5646
3.44
N&S Electronic Co., Limited