Part Number | RN2911FE (TE85L,F) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN2911FE
TOSHBIA
7586
0.02
Gallop Great Holdings (Hong Kong) Limited
RN2911FE
TOSHI
6135
1.51
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2911FE
TOSIBA
9804
3
N&S Electronic Co., Limited
RN2911FE(TE85L
TOSIHBA
2709
4.49
N&S Electronic Co., Limited
RN2911FE
TOSHIDA
6692
5.98
Yingxinyuan INT'L (Group) Limited