Part Number | RN2910 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.2W US6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image |
RN2910
TOSHBIA
5000
1.04
Gallop Great Holdings (Hong Kong) Limited
RN2910
TOSHI
4000
1.83
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2910(T5L,F,T)
TOSIBA
8000
2.62
MY Group (Asia) Limited
RN2910
TOSIHBA
51900
3.41
Yingxinyuan INT'L (Group) Limited
RN2910
TOSHIDA
109090
4.2
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED