Description
RN2909, TOSHIBA, SOT-363, Discrete Semiconductor Products, Transistors (BJT) - Arrays, Pre-Biased
Part Number | RN2909 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.2W US6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image |
RN2909(T5L,F,T)
TOSHBIA
8000
1.59
MY Group (Asia) Limited
RN2909
TOSHI
9000
2.5475
AIC Semiconductor Co., Limited
RN2909
TOSIBA
4000
3.505
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2909
TOSIHBA
275420
4.4625
Cicotex Electronics (HK) Limited
RN2909
TOSHIDA
25500
5.42
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED