Part Number | RN2908FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN2908FE
TOSHBIA
6279
0.07
Dedicate Electronics (HK) Limited
RN2908FE
TOSHI
1000
1.24
ONSTAR ELECTRONICS CO., LIMITED
RN2908FE(TE85L,F)
TOSIBA
15000
2.41
MY Group (Asia) Limited
RN2908FE
TOSIHBA
11880
3.58
SENTAI CO., LIMITED
RN2908FE
TOSHIDA
4000
4.75
IC WELL ELECTRONICS (HK) CO., LIMITED