Part Number | RN2907 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.2W US6 |
Series | - |
Packaging | |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image |
RN2907
TOSHBIA
11330
0.56
AIC Semiconductor Co., Limited
RN2907
TOSHI
3000
1.43
Gallop Great Holdings (Hong Kong) Limited
RN2907
TOSIBA
18000
2.3
DES TECHNOLOGY (HK) LIMITED
RN2907
TOSIHBA
3000
3.17
Showtech International (HK) Co.,Limited
RN2907
TOSHIDA
8000
4.04
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED