Part Number | RN2906FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ES6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN2906FE(TE85L,F)
TOSHBIA
8000
1.13
MY Group (Asia) Limited
RN2906FE
TOSHI
6276
2.51
Dedicate Electronics (HK) Limited
RN2906FE
TOSIBA
2900
3.89
HK HEQING ELECTRONICS LIMITED
RN2906FE
TOSIHBA
4000
5.27
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2906FE
TOSHIDA
7151
6.65
Yingxinyuan INT'L (Group) Limited