Part Number | RN2712JE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN2712JE
TOSHBIA
710
1.22
Dedicate Electronics (HK) Limited
RN2712JE
TOSHI
9748
2.305
ONSTAR ELECTRONICS CO., LIMITED
RN2712JE(TE85L,F)
TOSIBA
512
3.39
MY Group (Asia) Limited
RN2712JE(TE85L)
TOSIHBA
6141
4.475
Pivot Technology Co., Ltd.
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TOSHIDA
419
5.56
SENTAI CO., LIMITED