Part Number | RN2709JE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN2709JE
TOSHBIA
2359
0.25
Dedicate Electronics (HK) Limited
RN2709JE
TOSHI
469
1.445
ONSTAR ELECTRONICS CO., LIMITED
RN2709JE(TE85L,F)
TOSIBA
1741
2.64
MY Group (Asia) Limited
RN2709JE
TOSIHBA
3074
3.835
SENTAI CO., LIMITED
RN2709
TOSHIDA
7764
5.03
Dedicate Electronics (HK) Limited