Part Number | RN2708JE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN2708JE
TOSHBIA
6263
1.2
Dedicate Electronics (HK) Limited
RN2708JE
TOSHI
1000
2.17
ONSTAR ELECTRONICS CO., LIMITED
RN2708JE(TE85L,F)
TOSIBA
15000
3.14
MY Group (Asia) Limited
RN2708JE
TOSIHBA
11855
4.11
SENTAI CO., LIMITED
RN2708
TOSHIDA
6262
5.08
Dedicate Electronics (HK) Limited