Part Number | RN2707JE(TE85L,F) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN2707JE(TE85L,F)
TOSHBIA
5365
1.8
Shenzhen ORIC Technology Co., Ltd
RN2707JE(TE85L,F)
TOSHI
8003
3.135
MY Group (Asia) Limited
RN2707JE
TOSIBA
8686
4.47
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
RN2707JE
TOSIHBA
2504
5.805
Dedicate Electronics (HK) Limited
RN2707JE(TE85LF)
TOSHIDA
8079
7.14
Xinghuan International Trade Limited