Part Number | RN2704JE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN2704JE
TOSHBIA
33000
0.83
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2704JE(TE85L,F)
TOSHI
8000
2.2225
MY Group (Asia) Limited
RN2704JE
TOSIBA
4000
3.615
Shenzhen huiyitai Electronic Technology Co., Ltd
RN2704JE
TOSIHBA
360
5.0075
Yingxinyuan INT'L (Group) Limited
RN2704JE
TOSHIDA
89359
6.4
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED