Part Number | RN2510 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2PNP PREBIAS 0.3W SMV |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74A, SOT-753 |
Supplier Device Package | SMV |
Image |
RN2510(TE85L,F)
TOSHBIA
15000
0.07
MY Group (Asia) Limited
RN2510
TOSHI
6243
0.945
Dedicate Electronics (HK) Limited
RN2510
TOSIBA
83000
1.82
Yingxinyuan INT'L (Group) Limited
RN2510
TOSIHBA
1000
2.695
ONSTAR ELECTRONICS CO., LIMITED
RN2510
TOSHIDA
15000
3.57
MY Group (Asia) Limited