Part Number | RN2313 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 0.1W USM |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
Image |
RN2313(TE85L,F)
TOSHBIA
6499
0.85
MY Group (Asia) Limited
RN2313
TOSHI
7078
1.7875
Hongkong Shengshi Electronics Limited
RN2313
TOSIBA
4037
2.725
Cicotex Electronics (HK) Limited
RN2313
TOSIHBA
9024
3.6625
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
RN2313
TOSHIDA
898
4.6
Yingxinyuan INT'L (Group) Limited