Part Number | RN2312 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 0.1W USM |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
Image |
RN2312(TE85L,F)
TOSHBIA
15000
1.6
MY Group (Asia) Limited
RN2312
TOSHI
5000000
2.85
Hongkong Shengshi Electronics Limited
RN2312
TOSIBA
360000
4.1
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
RN2312
TOSIHBA
275328
5.35
Cicotex Electronics (HK) Limited
RN2312
TOSHIDA
31500
6.6
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED