Part Number | RN2118MFV |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 0.15W VESM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Image |
RN2118MFV
TOSHBIA
1272
0.35
Dedicate Electronics (HK) Limited
RN2118MFV
TOSHI
2645
0.67
ONSTAR ELECTRONICS CO., LIMITED
RN2118MFV(TPL3)
TOSIBA
8362
0.99
MY Group (Asia) Limited
RN2118MFV
TOSIHBA
3168
1.31
SENTAI CO., LIMITED
RN2118
TOSHIDA
7018
1.63
Dedicate Electronics (HK) Limited