Part Number | RN2110ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 0.1W CST3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN2110ACT(TPL3)
TOSHBIA
3862
1.63
MY Group (Asia) Limited
RN2110ACT
TOSHI
292
3.1875
AIC Semiconductor Co., Limited
RN2110ACT
TOSIBA
9079
4.745
HK HEQING ELECTRONICS LIMITED
RN2110ACT
TOSIHBA
243
6.3025
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2110ACT
TOSHIDA
8213
7.86
Yingxinyuan INT'L (Group) Limited