Part Number | RN2107ACT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 0.1W CST3 |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Image |
RN2107ACT
TOSHBIA
30000
0.76
AIC Semiconductor Co., Limited
RN2107ACT
TOSHI
10000
1.835
HK HEQING ELECTRONICS LIMITED
RN2107ACT
TOSIBA
6100
2.91
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2107ACT
TOSIHBA
275267
3.985
Cicotex Electronics (HK) Limited
RN2107ACT
TOSHIDA
102500
5.06
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED