Part Number | RN2101 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | Toshiba |
Description | TRANS PREBIAS PNP 0.1W SSM |
Series | - |
Packaging | |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
Image |
RN2101
TOSHBIA
90000
1.48
AIC Semiconductor Co., Limited
RN2101
TOSHI
18000
2.1975
HK HEQING ELECTRONICS LIMITED
RN2101
TOSIBA
31000
2.915
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN2101
TOSIHBA
268084
3.6325
Cicotex Electronics (HK) Limited
RN2101
TOSHIDA
6000
4.35
Yingxinyuan INT'L (Group) Limited