Part Number | RN1971FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1971FE(TE85L,F)
TOSHBIA
8000
1.81
MY Group (Asia) Limited
RN1971FE(TE85L
TOSHI
7462
2.8625
HK HEQING ELECTRONICS LIMITED
RN1971FE
TOSIBA
54700
3.915
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
RN1971FE(TE85L,F)
TOSIHBA
1103
4.9675
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1971FE(TE85L
TOSHIDA
8220
6.02
HK TWO L ELECTRONIC LIMITED