Part Number | RN1967FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1967FE
TOSHBIA
6120
0.12
Dedicate Electronics (HK) Limited
RN1967FE(TE85L,F)
TOSHI
8000
1.02
MY Group (Asia) Limited
RN1967
TOSIBA
83000
1.92
Yingxinyuan INT'L (Group) Limited
RN1967
TOSIHBA
60000
2.82
Sino Star Electronics (HK) Co.,Limited
RN1967
TOSHIDA
2970
3.72
Bonase Electronics (HK) Co., Limited