Part Number | RN1964FE(TE85L,F) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1964FE(TE85L,F)
TOSHBIA
5000
1.61
XINYUN ELECTRONICS COMPANY LIMITED
RN1964FE
TOSHI
3500
2.685
Gallop Great Holdings (Hong Kong) Limited
RN1964FE(TE85L,F)
TOSIBA
11414
3.76
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1964FE
TOSIHBA
4100
4.835
WIN AND WIN ELECTRONICS LIMITED
RN1964FE
TOSHIDA
268070
5.91
Cicotex Electronics (HK) Limited