Description
RN1963FE, TOSHIBA, SOT563, Discrete Semiconductor Products, Transistors (BJT) - Arrays, Pre-Biased
Part Number | RN1963FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1963FE
TOSHBIA
10000
0.5
Shenzhen Kaidike Electronics Co., Ltd
RN1963FE
TOSHI
27000
1.425
LanKa Micro Electronic Co.,Limited
RN1963FE
TOSIBA
1000000
2.35
IC Chip Co., Ltd.
RN1963FE
TOSIHBA
27000
3.275
Gallop Great Holdings (Hong Kong) Limited
RN1963FE(TE85LF)
TOSHIDA
22801
4.2
CIS Ltd (CHECK IC SOLUTION LIMITED)