Part Number | RN1962FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1962FE
TOSHBIA
4000
0.58
HK HEQING ELECTRONICS LIMITED
RN1962FE
TOSHI
268066
1.49
Cicotex Electronics (HK) Limited
RN1962FE
TOSIBA
55300
2.4
Ande Electronics Co., Limited
RN1962FE
TOSIHBA
5000
3.31
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1962FE
TOSHIDA
110890
4.22
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED