Part Number | RN1961 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.2W US6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 4.7k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image |
RN1961
TOSHBIA
5401
0.25
Dedicate Electronics (HK) Limited
RN1961(TE85L,F)
TOSHI
7432
1.485
MY Group (Asia) Limited
RN1961FE
TOSIBA
1892
2.72
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1961CT
TOSIHBA
8809
3.955
Dedicate Electronics (HK) Limited
RN1961FE(TE85L,F)
TOSHIDA
1697
5.19
MY Group (Asia) Limited