Description
RN1911, TOSHIBA, SOT-363, Discrete Semiconductor Products, Transistors (BJT) - Arrays, Pre-Biased
Part Number | RN1911 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W US6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image |
RN1911
TOSHBIA
4000
0.75
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1911
TOSHI
3000
2.03
Yingxinyuan INT'L (Group) Limited
RN1911
TOSIBA
30000
3.31
Hong Kong Fly Bird Technology Limited
RN1911
TOSIHBA
135659
4.59
Cicotex Electronics (HK) Limited
RN1911
TOSHIDA
45182
5.87
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED