Part Number | RN1910FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1910FE
TOSHBIA
55855
0.27
Gallop Great Holdings (Hong Kong) Limited
RN1910FE
TOSHI
8000
1.0075
Showtech International (HK) Co.,Limited
RN1910FE
TOSIBA
68000
1.745
Yingxinyuan INT'L (Group) Limited
RN1910FE
TOSIHBA
267384
2.4825
Cicotex Electronics (HK) Limited
RN1910FE
TOSHIDA
18486
3.22
N&S Electronic Co., Limited