Part Number | RN1909FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1909FE
TOSHBIA
6105
0.34
Dedicate Electronics (HK) Limited
RN1909FE
TOSHI
1000
1.315
ONSTAR ELECTRONICS CO., LIMITED
RN1909FE(TE85L,F)
TOSIBA
8000
2.29
MY Group (Asia) Limited
RN1909FE
TOSIHBA
11728
3.265
SENTAI CO., LIMITED
RN1909
TOSHIDA
83000
4.24
Yingxinyuan INT'L (Group) Limited