Part Number | RN1908FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1908FE
TOSHBIA
5000
1.36
Gallop Great Holdings (Hong Kong) Limited
RN1908FE
TOSHI
5103
2.595
AIC Semiconductor Co., Limited
RN1908FE
TOSIBA
4000
3.83
IC WELL ELECTRONICS (HK) CO., LIMITED
RN1908FE(TE85L,F)
TOSIHBA
15000
5.065
MY Group (Asia) Limited
RN1908FE
TOSHIDA
25924
6.3
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED