Part Number | RN1906 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.2W US6 |
Series | - |
Packaging | |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image |
RN1906
TOSHBIA
131285
1.56
Gallop Great Holdings (Hong Kong) Limited
RN1906 /XF
TOSHI
12000
2.765
CIS Ltd (CHECK IC SOLUTION LIMITED)
RN1906(TE85LF)
TOSIBA
3000
3.97
F-power Electronics Co
RN1906
TOSIHBA
5000000
5.175
Hongkong Shengshi Electronics Limited
RN1906
TOSHIDA
368000
6.38
Shenzhen WTX Capacitor Co., Ltd.