Part Number | RN1902FE,LF(CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1902FE,LF(CT
TOSHBIA
5000
0.51
XINYUN ELECTRONICS COMPANY LIMITED
RN1902FE,LF(CT
TOSHI
35800
1.525
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
RN1902FE,LF(CT
TOSIBA
1000
2.54
Shenzhen Jinni Trading Co., Ltd.
RN1902FE,LF(CT
TOSIHBA
15000
3.555
MY Group (Asia) Limited
RN1902FE,LF(CT
TOSHIDA
1000
4.57
Compo Electronics Asia Limited