Part Number | RN1706JE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS 2NPN PREBIAS 0.1W ESV |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |
Image |
RN1706JE
TOSHBIA
6083
1.52
Dedicate Electronics (HK) Limited
RN1706JE(TE85L,F)
TOSHI
18000
2.12
MY Group (Asia) Limited
RN1706
TOSIBA
3000
2.72
Tianke Electronics (HK) Limited
RN1706
TOSIHBA
6082
3.32
Dedicate Electronics (HK) Limited
RN1706
TOSHIDA
15000
3.92
Bonase Electronics (HK) Co., Limited